| PART |
Description |
Maker |
| SR075E103ZA-RTR2 SR075E103ZA-RTR1 SR075C103KAATR1 |
CAPACITOR, CERAMIC, 50 V, Z5U, 0.01 uF, THROUGH HOLE MOUNT RADIAL LEADED
CAP 0.01UF 50V 10% X7R RAD.10 .15X.15 TR-13 CAPACITOR, CERAMIC, 50 V, X7R, 0.01 uF, THROUGH HOLE MOUNT
CAP 0.01UF 50V 10% X7R RAD.20 .20X.20 TR-13 CAPACITOR, CERAMIC, 50 V, X7R, 0.01 uF, THROUGH HOLE MOUNT
|
AVX, Corp.
|
| 06032R103K8B20D 06032R103K9B20D |
CAP 0.01UF 25V 10% X7R SMD-0603 T&R-7IN-PA NI-SN CAPACITOR, CERAMIC, MULTILAYER, 25 V, X7R, 0.01 uF, SURFACE MOUNT, 0603
CAP 0.01UF 50V 10% X7R SMD-0603 T&R-7IN-PA NI-SN CAPACITOR, CERAMIC, MULTILAYER, 50 V, X7R, 0.01 uF, SURFACE MOUNT, 0603
|
Yageo, Corp.
|
| M27C4001-35F1TR M27C4001-35F1X M27C4001-35F6TR M27 |
4 MBIT (512KB X8) UV EPROM AND OTP ROM
CAP 1000PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
CAP 0.01UF 25V 1% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 0.01UF 25V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1000PF 100V 10% NP0(C0G) SMD-1206 TR-13-PL SN-NIBAR
CAP 1000PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR MARKED
CAP 0.01UF 25V 20% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 12PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 120PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1300PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 1000PF 100V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 12PF 50V 10% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
LED Lamp; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
4 Mbit 512Kb x 8 UV EPROM and OTP EPROM 4兆位× 8紫外12KB的存储器和OTP存储
SERVSWITCH USB COAX CPU CABLES, WITH AUDIO 20FT 4兆位× 8紫外12KB的存储器和OTP存储
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| MBRB2030CT MBRB2035CT MBRB20100CT MBRB2080CT MBRB2 |
CAP 0.1UF 25V 10% X7R SMD-0805 T&R-7IN-PA NI-SN
20 Amp Schottky Barrier Rectifier 20 to 100 Volts
CAP 1000PF 50V 10% X7R SMD-0805 T&R-7IN-PA NI-SN
CAP 0.1UF 25V 10% X7R SMD-0805 T&R-7IN-PA NI-SN
|
MCC[Micro Commercial Components]
Micro Commercial Components Corp.
|
| K4H510838C-ZCCC K4H510438C-ZCCC K4H510838C-ZCB3 K4 |
512Mb C-die DDR SDRAM Specification 荤的512Mb芯片DDR SDRAM内存规格
CAP 0.01UF 1000V 10% X7R SMD-1812 TR-13 FLEXITERM
|
http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| SY100S811ZCTR SY100S811ZC SY100S811JC SY100S811 SY |
CAP 0.01UF 500V 10% X7R SMD-1210 TR-7
SINGLE SUPPLY 1:9 PECL/TTL-TO-PECL
|
Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
|
| 828L8L-6 828 828H8B 828H8B-2 828H8B-3 828H8B-4 828 |
CAP-ARRAY 220PF 4-ELEMENT 50V 10% C0G SMD-0805 TR-7-PA SN100
CB 2C 2#16S SKT RECP LINE
CAP CERAMIC 7.5PF 50V C0G 0402
ER 2C 2#16S PIN RECP LINE 2 × 2 8极点滤波
2 X 2 8-Pole Filters 2 × 2 8极点滤波
CAP CER 18 PF 16V C0G 01005 2 × 2 8极点滤波
CAP 2-ARRAY 4700PF 25V X7R 0504 2 × 2 8极点滤波
|
List of Unclassifed Man...
Frequency Devices
ETC[ETC]
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| IDT54FCT161AT IDT54FCT161ATD IDT54FCT161ATDB IDT54 |
FAST CMOS SYNCHRONOUS PRESETTABLE BINARY COUNTERS
CAP 0.01UF 200V 10% X7R SMD-1812 TR-7-PL SN-NIBAR 快CMOS同步预置二进制计数器
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
Integrated Device Techn...
|
| 0306ZC103KAT2A 0306ZC224KAJ2A 05085C471KAT2V 05085 |
CAP 0.01UF 10V 10% X7R SMD-0306 TR-7 PLATED-NI/SN CAPACITOR, CERAMIC, MULTILAYER, 10 V, X7R, 0.01 uF, SURFACE MOUNT, 0306
Low Inductance Capacitors
Low Inductance Capacitors
|
AVX, Corp.
AVX Corporation
|
| LP62S2048-I LP62S2048M-10LI LP62S2048M-10LLI LP62S |
CAP .01UF 50V CERAMIC MONO 5% 256K × 8位低电压CMOS的SRAM
CAP 1500PF 100V CERAMIC MONO 5% 256K × 8位低电压CMOS的SRAM
.10UF 100V 10% MONOLITH CERM CAP
CAP 10000PF 50V CERAMIC MONO 5%
256K X 8 BIT LOW VOLTAGE CMOS SRAM
|
AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
|
